FDS6679 Fairchild Semiconductor, FDS6679 Datasheet - Page 3

• Manufacturer Part Number: FDS6679
• Description: MOSFET P-CH 30V 13A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6679

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3939pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 7.3mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.6V
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Dc: 04+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device #1 FAN5009M
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
TMCL1
Device #2 FAN5109M
Package:
#Leads:
Precondition Description:
P/C
X
X
X
-1
-1
-1
P/C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
0V
Conditions
Readpoints
TP1
264
168
100
TP2
500
500
TP3
1000
Read-
points
Samples
A
45
77
77
Sample
A
0
Pg. 3