FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 6
![MOSFET P-CH 100V 22A D2PAK](/photos/5/57/55760/fqb22p10tm_sml.jpg)
FQB22P10TM
Manufacturer Part Number
FQB22P10TM
Description
MOSFET P-CH 100V 22A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB22P10TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13.5 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
22A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
96mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB22P10TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB22P10TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQB22P10TM_F085
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2008 Fairchild Semiconductor Corporation
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
SD
SD
GS
GS
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Compliment of DUT
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
(N-Channel)
(N-Channel)
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
Rev. C1, Oct 2008