ZXM64P02XTC Diodes Zetex, ZXM64P02XTC Datasheet

MOSFET P-CHAN 20V MSOP8

ZXM64P02XTC

Manufacturer Part Number
ZXM64P02XTC
Description
MOSFET P-CHAN 20V MSOP8
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM64P02XTC

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
6.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
Issue 2 - February 2008
DEVICE
ZXM64P02XTA
ZXM64P02XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM64P02
=-20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.090
TAPE WIDTH (mm)
12mm embossed
12mm embossed
I
D
= -3.5A
1
QUANTITY
PER REEL
1000 units
4000 units
G
S
S
S
ZXM64P02X
MSOP8
Top View
D
D
D
D

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ZXM64P02XTC Summary of contents

Page 1

... Low gate drive Low profile SOIC package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM64P02XTA 7 ZXM64P02XTC 13 DEVICE MARKING ZXM64P02 Issue 2 - February 2008 I = -3.5A D TAPE WIDTH (mm) QUANTITY PER REEL 12mm embossed 1000 units 12mm embossed ...

Page 2

ZXM64P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C ...

Page 3

Refer Note ( 100ms 10ms 1ms 100us 100m 0 Drain-Source Voltage (V) DS Safe Operating Area 80 Refer Note ( D=0.5 20 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 ...

Page 4

ZXM64P02X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

C 5V 4. 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 100 VDS=-10V 10 T=150°C T=25°C 1 0.1 0 Gate-Source Voltage (V) GS Typical Transfer ...

Page 6

ZXM64P02X 2000 1800 1600 Ciss 1400 Coss Crss 1200 1000 800 600 400 200 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms Issue 2 - February 2008 ...

Page 7

ZXM64P02X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Chadderton Technology Park, Chadderton, Oldham, OL9-9LL, United Kingdom. Telephone: (44)161 622 4422 ...

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