IRLU110PBF Vishay, IRLU110PBF Datasheet - Page 6

• Manufacturer Part Number: IRLU110PBF
• Description: MOSFET N-CH 100V 4.3A I-PAK
• Manufacturer: Vishay

Specifications of IRLU110PBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 4.6A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 540mohm
• Rds(on) Test Voltage Vgs: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.54 Ohm @ 5 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 10V
• Transistor Case: RoHS Compliant
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRLU110PBF

IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
www.vishay.com
6
Vary t
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Fig. 12a - Unclamped Inductive Test Circuit
to obtain
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Fig. 13a - Basic Gate Charge Waveform
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R
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Q
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Charge
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D.U.T
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
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Fig. 12b - Unclamped Inductive Waveforms
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AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-1139-Rev. C, 17-May-10
Document Number: 91323
D.U.T.
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