FDP6030BL Fairchild Semiconductor, FDP6030BL Datasheet
FDP6030BL
Manufacturer Part Number
FDP6030BL
Description
MOSFET N-CH 30V 40A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDP6030BL.pdf
(5 pages)
Specifications of FDP6030BL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
1160pF @ 15V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP6030BL
Manufacturer:
FSC
Quantity:
15 000
Part Number:
FDP6030BL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
2000 Fairchild Semiconductor International
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
G
J
DSS
GSS
D
, T
JC
JA
D
STG
Device Marking
S
FDB6030BL
FDP6030BL
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
TO-220
FDP Series
Derate above 25 C
Parameter
FDB6030BL
FDP6030BL
Device
- Pulsed
- Continuous
C
= 25 C
T
C
= 25°C unless otherwise noted
DS(on)
Reel Size
Features
• 40 A, 30 V. R
• Critical DC electrical parameters specified at elevated
• Rugged internal source-drain diode can eliminate the
• High performance trench technology for
• 175 C maximum junction temperature rating.
G
(Note 1)
Tube
13’’
need for an external Zener diode transient suppressor.
temperature.
extremely low R
S
FDP6030BL
R
DS(ON)
DS(ON)
DS(ON)
Tape Width
= 0.018
= 0.024
TO-263AB
FDB Series
D
24mm
.
N/A
-65 to +175
0.36
62.5
120
2.5
30
40
60
20
@ V
@ V
FDB6030BL
GS
GS
G
= 4.5 V.
= 10 V
FDP6030BL/FDB6030BL Rev.C
Quantity
800
July 2000
45
D
S
Units
W/ C
C/W
C/W
W
V
V
A
C
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Datasheet:
FDP6030BL Summary of contents
Page 1
... C FDP6030BL - Continuous (Note 1) - Pulsed = Device Reel Size 13’’ Tube July 2000 = 0.018 @ 0.024 @ DS(ON TO-263AB S FDB Series FDB6030BL Units 120 -65 to +175 C 2.5 C/W 62.5 C/W Tape Width Quantity 24mm 800 N/A 45 FDP6030BL/FDB6030BL Rev.C ...
Page 2
... Test Conditions (Note 250 250 A, Referenced - 250 250 A, Referenced 125 4.5 V 1.0 MHz GEN (Note (Note 2.0% Min Typ Max Units 150 mV 100 nA -100 -4.5 mV/ C 0.015 0.018 0.021 0.030 0.019 0.024 1160 pF 250 pF 100 3 0.95 1.2 V FDP6030BL/FDB6030BL Rev.C ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current 3.5V 4.0V 4.5V 5.0V 7.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDP6030BL/FDB6030BL Rev 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum ,TIME (ms MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =2.5°C 25° 100 1,000 SINGLE PULSE TIME (mSEC) Power Dissipation. R ( 2.5 °C/W JC P(pk ( Duty Cycle 100 1000 FDP6030BL/FDB6030BL Rev.C ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...