FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 5
![MOSFET N-CH 40V 145A DPAK](/photos/5/57/55764/fdd8444_sml.jpg)
FDD8444
Manufacturer Part Number
FDD8444
Description
MOSFET N-CH 40V 145A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8444.pdf
(7 pages)
Specifications of FDD8444
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
6195pF @ 25V
Power - Max
153W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
145 A
Power Dissipation
153000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8444TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8444
Manufacturer:
FSC进口
Quantity:
20 000
Company:
Part Number:
FDD8444L
Manufacturer:
FSC
Quantity:
2 809
Part Number:
FDD8444L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD8444 Rev B (W)
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
1000
100
Figure 9. Drain to Source On-Resistance
0.1
100
10
80
60
40
20
1
14
12
10
0
Variation vs Gate to Source Voltage
2.0
8
6
4
2
1
Figure 7. Transfer Characteristics
4
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
CURRENT LIMITED
BY PACKAGE
DD
V
= 5V
DS
V
V
2.5
GS
, DRAIN TO SOURCE VOLTAGE (V)
GS
5
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE
I
D
=
3.0
50A
6
SINGLE PULSE
T
T
J
C
T
= MAX RATED
= 25
J
T
= 25
J
μ
= 175
o
10
s
3.5
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
7
C
o
C
4.0
T
8
J
T
= 25
J
= 175
o
T
4.5
C
J
10us
10ms
100us
(
1ms
o
9
= -55
DC
V
C
)
μ
o
s
C
100
5.0
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10. Normalized Drain to Source On
500
100
Figure 6. Unclamped Inductive Switching
100
10
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
1
0
Resistance vs Junction Temperature
0.0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= (L)(I
= (L/R)ln[(I
V
= 10V
DS
-40
0.1
0.3
, DRAIN TO SOURCE VOLTAGE (V)
T
AS
J
, JUNCTION TEMPERATURE
)/(1.3*RATED BV
t
AV
AS
J
, TIME IN AVALANCHE (ms)
= 150
0
*R)/(1.3*RATED BV
Capability
V
0.6
1
o
GS
C
40
= 5V
STARTING T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
μ
DSS
s
10
0.9
80
- V
DD
DSS
)
J
- V
120
www.fairchildsemi.com
= 25
DD
100
V
V
1.2
GS
V
I
D
) +1]
GS
o
(
GS
C
o
= 50A
C
= 4.5V
= 10V
160
= 4V
)
μ
s
1000
1.5
200