FQB9N50CTM Fairchild Semiconductor, FQB9N50CTM Datasheet - Page 3

• Manufacturer Part Number: FQB9N50CTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1600
1200
800
400
10
10
10
0
-1
2.0
1.5
1.0
0.5
10
1
0
10
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
0
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
0
, Drain Current [A]
10
C
C
C
rss
iss
oss
V
GS
= 10V
15
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
gd
ds
※ Notes :
+ C
1
1
※ Note : T
+ C
1. 250 μ s Pulse Test
2. T
V
gd
※ Notes ;
gd
20
GS
C
1. V
2. f = 1 MHz
(C
= 25 ℃
= 20V
ds
GS
= shorted)
J
= 0 V
= 25 ℃
25
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
Variation with Source Current
0.4
150
5
150℃
o
C
4
V
V
and Temperature
Q
GS
SD
G
0.6
, Gate-Source Voltage [V]
10
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25℃
V
DS
V
= 400V
DS
-55
V
= 250V
o
DS
0.8
6
15
C
= 100V
1.0
20
※ Notes :
※ Note : I
1. V
2. 250 μ s Pulse Test
※ Notes :
8
1. V
2. 250 μ s Pulse Test
GS
= 0V
DS
1.2
= 40V
25
D
= 9A
10
1.4
30
Rev. A, Jun 2009