NDP6020P Fairchild Semiconductor, NDP6020P Datasheet
NDP6020P
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NDP6020P Summary of contents
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... NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state ...
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... -250 µ 125° -4 - 125° - 1.0 MHz GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.4 -0 -0.3 -0.56 -0.7 0.041 0.05 0.06 0.08 0.059 0.07 0.064 0.075 - 1590 pF 725 pF 215 120 250 nS 70 150 NDP6020P Rev.C1 ...
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... Reverse Recovery Current I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Conditions -12 A (Note - /dt = 100 A/µs F Min Typ Max Units -24 A -80 A -1.1 -1 -1.7 A 2.5 °C/W 62.5 °C/W NDP6020P Rev.C1 ...
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... Figure 6. Gate Threshold Variation with Temperature -2.7 -3.0 -3.5 -4.0 -4.5 -5.0 -10 -20 -30 - DRAIN CURRENT ( -4. 125°C J 25°C -55°C -10 -20 -30 - DRAIN CURRENT ( Current and Temperature -250µ JUNCTION TEMPERATURE (° NDP6020P Rev.C1 -50 - ...
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... C iss C oss rss Figure 10. Gate Charge Characteristics t d(on DUT Figure 12. Switching Waveforms 125°C J 25°C -55° 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature V = -5V = -24A DS -15V GATE CHARGE (nC off t t d(off PULSE WIDTH . -10V INVERTED NDP6020P Rev.C1 ...
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... Single Pulse 0.02 0.01 0.01 0.1 Figure 15. Transient Thermal Response Curve. (continued) 100 -55° 25°C 10 125° -20 - ,TIME ( -4.5V GS SINGLE PULSE R = 2.5 °C 25° DRAIN-SOURCE VOLTAGE (V) DS Figure 14. Maximum Safe Operating Area R ( 2.5 °C/W JC P(pk ( Duty Cycle NDP6020P Rev.C1 ...