FQPF32N20C Fairchild Semiconductor, FQPF32N20C Datasheet - Page 3
![MOSFET N-CH 200V 28A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF32N20C
Manufacturer Part Number
FQPF32N20C
Description
MOSFET N-CH 200V 28A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP32N20C.pdf
(10 pages)
Specifications of FQPF32N20C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2220pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.082 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF32N20C
Manufacturer:
FSC
Quantity:
48 000
Company:
Part Number:
FQPF32N20C
Manufacturer:
IR
Quantity:
2 000
Company:
Part Number:
FQPF32N20C
Manufacturer:
Fairchi/ON
Quantity:
98 000
Part Number:
FQPF32N20C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
6000
5000
4000
3000
2000
1000
10
10
10
0
2
1
0
10
0.3
0.2
0.1
0.0
10
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 4.5 V
0
Figure 3. On-Resistance Variation vs
※
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
= 0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
20
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
0
, Drain Current [A]
40
C
C
C
oss
rss
iss
V
GS
= 10V
60
C
C
C
iss
oss
rss
※
= C
= C
= C
1. 250µ s Pulse Test
2. T
10
Notes :
10
gs
gd
ds
※
1
C
1
+ C
+ C
= 25 ℃
Note : T
80
gd
gd
(C
V
ds
GS
J
= shorted)
= 25 ℃
= 20V
100
10
10
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
2
1
0
2
1
0
0.0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
o
C
Variation with Source Current
o
C
0.4
20
4
150 ℃
V
V
Q
GS
SD
and Temperature
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
, Total Gate Charge [nC]
25 ℃
DS
V
= 160V
-55
0.8
40
DS
o
= 100V
C
V
DS
6
= 40V
1.2
60
※
1. V
2. 250µ s Pulse Test
Notes :
※
DS
1. V
2. 250µ s Pulse Test
Notes :
※
8
= 40V
GS
Note : I
1.6
80
= 0V
D
= 32.0A
Rev. A, March 2004
100
10
2.0