FDB6670AL Fairchild Semiconductor, FDB6670AL Datasheet - Page 3

• Manufacturer Part Number: FDB6670AL
• Description: MOSFET N-CH 30V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB6670AL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 5V
• Input Capacitance (ciss) @ Vds: 2440pF @ 15V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Dc: 10+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
100
100
75
50
25
80
60
40
20
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
0
2
-50
Figure 5. Transfer Characteristics.
V
V
V
I
DS
GS
D
GS
= 80A
-25
= 10V
= 10V
6.0V
=10V
V
V
0.5
2.5
GS
DS
T
0
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
T
Temperature.
A
= 125
25
4.5V
o
C
4.0V
1
3
50
3.5V
-55
o
C
75
25
o
C
3.0V
1.5
3.5
100
o
C)
125
2
150
4
Figure 6. Body Diode Forward Voltage Variation
0.021
0.017
0.013
0.009
0.005
0.001
1000
0.01
100
1.8
1.6
1.4
1.2
0.8
0.1
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
1
2
0
0
V
Drain Current and Gate Voltage.
V
GS
T
GS
A
= 3.5V
= 25
= 0V
0.2
Gate-to-Source Voltage.
o
V
C
20
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
4
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
4.0V
I
D
, DRAIN CURRENT (A)
o
C
4.5V
40
T
A
0.6
= 125
25
5.0V
6
o
o
C
C
0.8
60
FDP6670AL/FDB6670AL Rev D(W)
6.0V
-55
o
1
C
8
10V
80
I
1.2
D
= 40A
100
1.4
10