FQPF8N60CFT Fairchild Semiconductor, FQPF8N60CFT Datasheet
FQPF8N60CFT
Specifications of FQPF8N60CFT
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FQPF8N60CFT Summary of contents
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... Parameter - Continuous (T = 25° Continuous (T = 100° Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Derate above 25°C Parameter 1 February 2006 FRFET FQPF8N60CFT Units 600 6.26* 3.96* 25* ± 30 160 mJ 6.26 14.7 mJ 4.5 V/ 0.38 W/°C -55 to +150 °C 300 °C FQPF8N60CF Units 2.6 ° ...
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... Package Marking and Ordering Information Device Marking Device FQPF8N60CFT FQPF8N60CFT Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / DSS Breakdown Voltage Temperature Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...
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Unclamped Inductive Switching Test Circuit & Waveforms FQPF8N60CF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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FQPF8N60CF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQPF8N60CF Rev. A TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 7 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...