FDW256P Fairchild Semiconductor, FDW256P Datasheet - Page 2

• Manufacturer Part Number: FDW256P
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW256P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 5V
• Input Capacitance (ciss) @ Vds: 2267pF @ 15V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Change To
Device #1 FDW2508PB
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
H3TRB
HTGB
HTRB
PRCL
TMCL1
Device #2 FDW254P
Package:
#Leads:
Precondition Description:
Stress
P/C
X
X
X
-1
-1
-1
-1
P/C
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A101B85%RH, 85C,
JESD22-A108 150C, 100% of
JESD22-A108 150C, 80% of re-
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Standard
Qualification Stress Test and Sample Size Detail
Conditions
80% of related
BV
related VgsV
lated BV
Delta 100C, 2
Min cycle
Conditions
Conditions
Readpoints
TP1
168
168
168
5000
100
TP2
500
500
500
500
TP3
1000
1000
1000
Read-
points
Read-
points
Samples
A
77
77
77
77
77
77
Sample
Sample
A
A
0
Pg. 2