IRFR9214PBF Vishay, IRFR9214PBF Datasheet - Page 3
![MOSFET P-CH 250V 2.7A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9214PBF
Manufacturer Part Number
IRFR9214PBF
Description
MOSFET P-CH 250V 2.7A DPAK
Manufacturer
Vishay
Specifications of IRFR9214PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
220pf @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-250V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFR9214PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9214PBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 961
Document Number: 91282
0.1
10
0.1
1
10
0.1
1
TOP
BOTTOM
4
-V
T = 25 C
DS
-V
J
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
5
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
1
6
7
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
T = 150 C
DS
J
10
-4.5V
8
= -50V
°
°
9
100
10
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-2.7A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40
60 80 100 120 140 160
20µs PULSE WIDTH
T = 150 C
J
10
-4.5V
www.vishay.com
°
V
°
GS
=
-10V
100
3