FDD2572 Fairchild Semiconductor, FDD2572 Datasheet - Page 2

• Manufacturer Part Number: FDD2572
• Description: MOSFET N-CH 150V 29A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2572

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 54 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD2572; FDD2572TR

©2002 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDD2572
FDU2572
J
= 25°C, L = 0.2mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
= 19A.
Parameter
FDD2572
FDU2572
Device
T
C
= 25°C unless otherwise noted
(V
GS
TO-252AA
TO-251AA
Package
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DS
GS
GS
GS
DS
GS
GS
DD
GS
=9A, V
=9A, V
= 250 A, V
= 4A, V
= 9A
= 4A
= 9A, dI
= 9A, dI
= 0V
= 20V
= 0V to 10V
= 0V to 2V
= 120V
= V
= 25V, V
= 75V, I
= 10V, R
Test Conditions
DS
GS
GS
GS
, I
=10V
=10V, T
SD
SD
D
D
= 6V,
GS
GS
GS
= 9A
/dt =100A/ s
/dt =100A/ s
= 250 A
Reel Size
330mm
= 0V,
= 0V
= 11.0
Tube
T
V
I
I
D
g
C
C
DD
= 1.0mA
=175
= 9A
= 150
= 75V
o
C
o
Tape Width
Min
150
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
N/A
0.045
0.050
0.126
1770
183
Typ
3.3
40
26
11
14
31
14
8
5
6
-
-
-
-
-
-
-
-
-
-
-
0.054
0.075
0.146
Max
1.25
250
169
4.3
FDD2572 / FDU2572 Rev. B
100
1.0
34
36
66
74
2500 units
1
4
-
-
-
-
-
-
-
-
-
-
-
Quantity
75 units
Units
nA
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A