IRFR9310PBF Vishay, IRFR9310PBF Datasheet - Page 4
![MOSFET P-CH 400V 1.8A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9310PBF
Manufacturer Part Number
IRFR9310PBF
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Specifications of IRFR9310PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-400V
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
500
400
300
200
100
20
16
12
8
4
0
0
0
1
I =
D
-1.1A
-V
Q , Total Gate Charge (nC)
DS
G
4
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
C oss
C rss
C iss
0V,
C
C
C
gs
gd
ds
V
V
V
+ C
+ C
8
10
DS
DS
DS
f = 1MHz
gd ,
gd
FOR TEST CIRCUIT
=-320V
=-200V
=-80V
SEE FIGURE
C
ds
12
SHORTED
13
16
100
100
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
1
1
1.0
10
T
T
Single Pulse
C
J
= 25 C
= 150 C
Fig. 8 - Maximum Safe Operating Area
OPERATION IN THIS AREA LIMITED
-V
-V
DS
°
SD
°
T = 150 C
J
2.0
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
BY R
100
3.0
DS(on)
S10-1139-Rev. C, 17-May-10
T = 25 C
J
Document Number: 91284
°
4.0
V
GS
10us
100us
1ms
10ms
= 0 V
1000
5.0