FQP65N06 Fairchild Semiconductor, FQP65N06 Datasheet - Page 3

• Manufacturer Part Number: FQP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 65 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
5000
4000
3000
2000
1000
10
10
10
0
10
30
25
20
15
10
2
1
0
10
5
0
-1
0
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 4.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
50
V
V
C
C
DS
C
DS
100
rss
oss
iss
, Drain-Source Voltage [V]
V
, Drain-Source Voltage [V]
I
GS
D
10
, Drain Current [A]
= 20V
0
V
GS
10
※ Notes :
0
= 10V
1. 250μ s Pulse Test
2. T
150
C
= 25℃
200
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Note : T
gs
gd
ds
1
+ C
+ C
gd
※ Notes :
250
gd
1. V
2. f = 1 MHz
(C
ds
10
J
GS
= 25℃
= shorted)
1
= 0 V
300
10
10
10
10
10
10
12
10
2
1
0
2
1
0
0.2
8
6
4
2
0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175 ℃
Figure 2. Transfer Characteristics
25 ℃
0.4
175 ℃
Variation vs. Source Current
10
0.6
4
Q
V
V
25 ℃
and Temperature
G
GS
SD
-55 ℃
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
0.8
20
V
DS
1.0
V
6
= 48V
DS
= 30V
30
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 25V
40
= 0V
D
= 65A
1.6
Rev. A1. May 2001
50
1.8
10