FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet - Page 4

• Manufacturer Part Number: FQPF10N60C
• Description: MOSFET N-CH 600V 9.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF10N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.73 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N60C / FQPF10N60C Rev. C
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
10
10
10
10
10
-1
8
6
4
2
0
2
1
0
10
25
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
vs. Case Temperature
for FQP10N60C
50
-50
V
Operation in This Area
is Limited by R
T
DS
T
C
10
, Drain-Source Voltage [V]
, Case Temperature [
J
, Junction Temperature [
1
0
75
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DC
50
°
C
°
100
C
100 ms
10 ms
10
°
C]
2
100
1 ms
°
C]
* Notes :
125
1. V
2. I
100
D
GS
= 250
150
µ
= 0 V
s
µ
A
10
µ
s
150
10
3
200
(Continued)
4
Figure 8. On-Resistance Variation
Figure 9-2. Maximum Safe Operating Area
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
vs. Temperature
-100
-1
-2
2
1
0
10
for FQPF10N60C
0
-50
T
V
J
DS
, Junction Temperature [
10
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1
* Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
°
C
°
DS(on)
50
C
DC
100 ms
10 ms
10
100
2
°
1 ms
C]
100
* Notes :
µ
www.fairchildsemi.com
s
1. V
2. I
150
10
D
GS
= 4.75 A
µ
= 10 V
s
10
3
200