FDP3682 Fairchild Semiconductor, FDP3682 Datasheet - Page 4

• Manufacturer Part Number: FDP3682
• Description: MOSFET N-CH 100V 32A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP3682

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDB3682/FDP3682 Rev.B1
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
100
200
Figure 5. Forward Bias Safe Operating Area
0.1
10
80
60
40
20
60
50
40
30
20
1
0
3.5
1
0
Figure 7. Transfer Characteristics
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
T
T
OPERATION IN THIS
SINGLE PULSE
LIMITED BY r
DD
J
C
= MAX RATED
= 25
= 15V
4.0
T
AREA MAY BE
5
J
o
= 25
V
C
V
DS
GS
4.5
, DRAIN TO SOURCE VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE (V)
C
10
DS(ON)
Id, DRAIN CURRENT (A)
Current
T
5.0
J
= 175
10
15
5.5
o
C
T
VGS = 6V
J
20
VGS = 10V
= -55
10ms
DC
6.0
T
C
1ms
o
C
= 25°C unless otherwise noted
25
100 s
6.5
100
30
7.0
10 s
200
7.5
35
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
4
10
80
60
40
20
1
0
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
3.0
2.5
2.0
1.5
1.0
0.5
0.001
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
If R = 0
t
If R
t
T
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
C
= (L)(I
= (L/R)ln[(I
= 25
STARTING T
0
-40
o
C
AS
V
DS
0.01
T
)/(1.3*RATED BV
1
J
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
AS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
Capability
J
= 150
40
o
C
V
0.1
DSS
2
GS
= 20V
- V
80
DD
STARTING T
DSS
)
V
- V
GS
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120
DD
= 10V, I
o
1
3
) +1]
C)
V
J
V
V
GS
GS
GS
160
= 25
D
=32A
= 10V
= 6V
= 5V
o
C
200
10
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