RFD14N05SM Fairchild Semiconductor, RFD14N05SM Datasheet

MOSFET N-CH 50V 14A TO-252AA

RFD14N05SM

Manufacturer Part Number
RFD14N05SM
Description
MOSFET N-CH 50V 14A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD14N05SM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 20V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
Packaging
RFD14N05
RFD14N05SM
RFP14N05
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
TO-220AB
JEDEC TO-251AA
PACKAGE
Data Sheet
SOURCE
F14N05
F14N05
RFP14N05
DRAIN
GATE
DRAIN (FLANGE)
BRAND
JEDEC TO-220AB
RFD14N05, RFD14N05SM, RFP14N05
Features
• 14A, 50V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
C Operating Temperature
SOURCE
January 2002
DRAIN
= 0.100 Ω
SOURCE
GATE
GATE
JEDEC TO-252AA
G
RFD14N05, RFD14N05SM, RFP14N05 Rev. B
DRAIN (FLANGE)
D
S
®
Model

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RFD14N05SM Summary of contents

Page 1

... RFD14N05 TO-251AA RFD14N05SM TO-252AA RFP14N05 TO-220AB NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Features • ...

Page 2

... L 260 pkg MIN TYP 0V 150 10V 40V 14A 2.86 Ω 0.4mA g(REF (Figure 13) - 570 - 185 - MIN TYP - - - - RFD14N05, RFD14N05SM, RFP14N05 Rev. B UNITS MAX UNITS - µ µ A 250 ± 100 nA Ω 0.100 100 1 3.125 C/W o 100 C C/W MAX UNITS 1.5 V 125 ns ...

Page 3

... PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK V = 20V GS CURRENT AS FOLLOWS 10V  GS 175  = ---------------------  TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD14N05, RFD14N05SM, RFP14N05 Rev. B 150 175 +  –  150  ...

Page 4

... T , JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V = 10V 14A GS 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE RFD14N05, RFD14N05SM, RFP14N05 Rev 4. 120 160 200 o C) 120 160 200 o C) ...

Page 5

... 0.4mA G(REF 10V REF ( ) --------------------- t, TIME (µ ACT ( ) CONSTANT CURRENT GATE DRIVE BV DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 90% 10% GS 50% PULSE WIDTH 10% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFD14N05, RFD14N05SM, RFP14N05 Rev DSS 7.5 5.0 2 REF ( ) --------------------- I G ACT ( ) OFF t d(OFF 90% 10% 90% 50% ...

Page 6

... Test Circuits and Waveforms G(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT G(REF g(TOT g(10 10V GS Q g(TH) FIGURE 19. GATE CHARGE WAVEFORMS RFD14N05, RFD14N05SM, RFP14N05 Rev 20V GS ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSCL2 - 6 ESG 8 + VTO EVTO GATE - + LGATE RGATE RIN S1A S2A S1B S2B EGS LDRAIN RSCL1 DBREAK ESCL RDRAIN 17 16 EBREAK MOS2 21 MOS1 CIN LSOURCE RSOURCE 8 7 RBREAK EDS 8 - RFD14N05, RFD14N05SM, RFP14N05 Rev. B DRAIN 2 DBODY 3 SOURCE 18 RVTO 19 VBAT + ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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