ZXMP10A18GTA Diodes Zetex, ZXMP10A18GTA Datasheet - Page 2

• Manufacturer Part Number: ZXMP10A18GTA
• Description: MOSFET P-CH 100V 3.7A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A18GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 50V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A18GTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300 s - pulse width limited by maximum junction temperature.
ZXMP10A18G
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@V
@ V
(a)
(b)
GS
GS
GS
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=70°C
=25°C
=25°C
(b)
10 sec.
(b)
(b)
(a)
2
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
D
D
j
DSS
GS
, T
JA
JA
stg
-55 to +150
VALUE
LIMIT
-16.5
-16.5
62.5
32.2
-100
-3.7
-3.0
-2.6
-5.3
±20
3.9
16
31
2
ISSUE 1 - MARCH 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
A
A
A
A
A
A
V
V