SI4850EY-T1-E3 Vishay, SI4850EY-T1-E3 Datasheet

MOSFET N-CH 60V 6A 8-SOIC

SI4850EY-T1-E3

Manufacturer Part Number
SI4850EY-T1-E3
Description
MOSFET N-CH 60V 6A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI4850EY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
1700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
3.3W
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.022Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4850EY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4850EY-T1-E3
Manufacturer:
Vishay
Quantity:
2 350
Part Number:
SI4850EY-T1-E3
Manufacturer:
VISHAY
Quantity:
800
Part Number:
SI4850EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4850EY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
60
(V)
G
S
S
S
N-Channel Reduced Q
0.031 at V
0.022 at V
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
R
DS(on)
Top View
GS
GS
J
a
SO-8
= 175 °C)
(Ω)
= 4.5 V
= 10 V
a
a
8
7
6
5
D
D
D
D
I
A
D
8.5
7.2
(A)
= 25 °C, unless otherwise noted
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
I
DM
thJA
thJF
AS
DS
GS
AS
D
D
stg
®
Power MOSFETs
Typical
10 s
8.5
7.1
3.3
2.3
36
75
17
G
N-Channel MOSFET
- 55 to 175
± 20
60
40
15
11
D
S
Steady State
Maximum
6.0
5.0
1.7
1.2
45
90
20
Vishay Siliconix
Si4850EY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4850EY-T1-E3 Summary of contents

Page 1

... GS 60 0.031 4 SO Top View Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4850EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Gate Charge 175 ° 0.00 0.5 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71146 S09-1341-Rev. F, 13-Jul- °C J 1.5 2.0 2.5 Si4850EY Vishay Siliconix 1400 1200 C iss 1000 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 ...

Page 4

... Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.4 0.0 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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