ZVN3306A Diodes Zetex, ZVN3306A Datasheet
ZVN3306A
Manufacturer Part Number
ZVN3306A
Description
MOSFET N-CH 60V 270MA TO92-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet
1.ZVN3306ASTOA.pdf
(3 pages)
Specifications of ZVN3306A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
270mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
35pF @ 18V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
270mA
Power Dissipation
625mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN3306A
Manufacturer:
ZETEX
Quantity:
79
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
2) Sample test.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DSon)
=5
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
60
0.8
750
150
3-375
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
20
0.5
50
5
35
25
8
5
7
6
8
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=60V, V
=48V, V
=18V, V
=10V,I
=18V,I
=18V, V
VALUE
18V, I
270
625
60
ZVN3306A
3
20
TO92 Compatible
D
D
GS
DS
=500mA
=500mA
GS
GS
GS
GS
D
D
=0V
=500mA
G
= V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
S
E-Line
=0V
GS
UNIT
mW
mA
°C
A
V
V
(2)
(
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ZVN3306A Summary of contents
Page 1
... DSS V 0.8 2.4 V GS(th GSS I 0.5 A DSS 750 mA D(on DS(on) g 150 iss oss rss d(on d(off 3-375 ZVN3306A E-Line TO92 Compatible VALUE UNIT 60 V 270 625 mW -55 to +150 °C I =1mA ID=1mA 20V =60V =48V, V =0V, T=125°C ( =18V, V =10V =10V,I =500mA ...
Page 2
... ZVN3306A TYPICAL CHARACTERISTICS V 10V 9V GS= 1.0 0.8 0.6 0.4 0 Drain Source Voltage (Volts) DS Saturation Characteristics 1.0 V 10V DS= 0.8 0.6 0.4 0 Gate Source Voltage (Volts) GS- Transfer Characteristics 2.4 2.2 I 0.5A D=- 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 - T-Temperature (C°) ...
Page 3
... V -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage V =20V 30V 50V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q-Charge (nC) Gate charge v gate-source voltage Capacitance v drain-source voltage I 800mA D= 3-377 ZVN3306A -Drain Source Voltage (Volts iss C oss C rss 50 ...