SIR402DP-T1-GE3 Vishay, SIR402DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR402DP-T1-GE3
• Description: MOSFET N-CH 30V 35A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SIR402DP-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 36W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.7 A
• Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIR402DP-T1-GE3TR

SiR402DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68683.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
0.02
10
0.05
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 1
10
- 2
1
10
10
Notes:
1 .
2. Per Unit Base = R
3. T
4. Surface Mounted
P
- 1
DM
Duty Cycle, D =
JM
- T
t
1
A
S09-1087-Rev. C, 15-Jun-09
= P
t
2
Document Number: 68683
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 58 °C/W
600
1