FQP32N20C_F080 Fairchild Semiconductor, FQP32N20C_F080 Datasheet - Page 4

• Manufacturer Part Number: FQP32N20C_F080
• Description: MOSFET N-CH 200V 28A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP32N20C_F080

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.082 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
30
25
20
15
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
5
0
25
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
Figure 10. Maximum Drain Current
※
1. T
2. T
3. Single Pulse
Notes :
-50
C
J
= 150
= 25
50
o
C
o
C
Operation in This Area
is Limited by R
vs Case Temperature
T
J
, Junction Temperature [
V
T
vs Temperature
DS
0
for FQP32N20C
C
, Case Temperature [ ]
, Drain-Source Voltage [V]
10
DS(on)
75
1
50
DC
100
10 ms
100
(Continued)
℃
o
1 ms
C]
※
100
1. V
2. I
10
Notes :
D
2
GS
125
= 250 µA
µ
150
= 0 V
s
200
150
10
10
10
10
-1
2
1
0
10
Figure 9-2. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
※
1. T
2. T
3. Single Pulse
Notes :
Figure 8. On-Resistance Variation
C
J
= 150
= 25
-50
o
C
o
C
Operation in This Area
is Limited by R
V
DS
T
for FQPF32N20C
, Drain-Source Voltage [V]
J
, Junction Temperature [
vs Temperature
10
0
1
DS(on)
DC
50
10 ms
1 ms
100
100
o
C]
10
µ
10
s
2
µ
s
※
1. V
2. I
150
Notes :
D
GS
= 14 A
= 10 V
200
Rev. A, March 2004