ZXM66P02N8TC Diodes Zetex, ZXM66P02N8TC Datasheet

MOSFET P-CHAN 20V 8SOIC

ZXM66P02N8TC

Manufacturer Part Number
ZXM66P02N8TC
Description
MOSFET P-CHAN 20V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM66P02N8TC

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
43.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
2068pF @ 15V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ordering Information
Marking Information
Product Summary
Description and Applications
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
Notes:
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
Inrush protection circuits
DC-DC Converters
Power management functions
Disconnect switches
Motor control
ZXM66P02N8TA
V
(BR)DSS
-20V
Product
1. For packaging details, go to our website.
Top View
SO-8
R
0.025Ω
DS(on)
(Note 1)
See below
Marking
YYWW
66P02
ZXM
20V P-CHANNEL ENHANCEMENT MODE MOSFET
-8.0A
I
D
Reel size (inches)
www.diodes.com
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
Top View
1 of 5
7
Features and Benefits
Mechanical Data
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High pulse current handling in linear mode
Low on-resistance
Fast switching speed
Low gate drive
Low profile SOIC package
Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Tape width (mm)
Diodes Incorporated
A Product Line of
12
G
Equivalent Circuit
D
S
Quantity per reel
ZXM66P02N8
© Diodes Incorporated
500
October 2009

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ZXM66P02N8TC Summary of contents

Page 1

Product Summary V R (BR)DSS DS(on) -20V 0.025Ω Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage ...

Page 2

Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current V = 4.5V GS Pulsed Drain current Continuous Source current (Body diode) Pulsed Source current (Body diode) Thermal Characteristics @T A Characteristic Power ...

Page 3

Typical Characteristics 10V T = 25° 0.1 0.1 -V Drain-Source Voltage (V) DS Output Characteristics 150°C 0.1 0.01 1E-3 500.0m 1.0 -V Gate-Source Voltage (V) GS Typical Transfer Characteristics 1. 0.1 0.01 ...

Page 4

Package Outline Dimensions DIM Inches Min. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Suggested Pad Layout ZXM66P02N8 Document Number DS31965 Rev Millimeters DIM Max. Min. Max. ...

Page 5

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...

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