IRFS654B_FP001 Fairchild Semiconductor, IRFS654B_FP001 Datasheet - Page 9

• Manufacturer Part Number: IRFS654B_FP001
• Description: MOSFET N-CH 250V 21A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS654B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 21 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 180 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 195 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
0.20
0.10
0.10
]
(Continued)
10.16
9.40
#1
(7.00)
0.20
0.20
[2.54
2.54TYP
TO-220F
ø3.18
0.20
]
0.10
(1.00x45 )
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
Rev. A, November 2001
0.20
0.20