IRF530SPBF Vishay, IRF530SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF530SPBF
• Description: POWER MOSFET D2PAK
• Manufacturer: Vishay

Specifications of IRF530SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF530S, SiHF530S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
J
GS
GS
V
R
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
g
Reference to 25 °C, I
= 10 V
= 10 V
J
= 12 , R
= 25 °C, I
= 80 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DS
DS
DS
GS
DD
-
-
-
= 100 V, V
F
= V
= 50 V, I
= 0 V, I
V
= 50 V, I
V
= 14 A, dI/dt = 100 A/μs
V
GS
D
DS
S
GS
GS
GS
= 3.6 , see fig. 10
I
D
= 14 A, V
= ± 20 V
= 25 V,
, I
= 0 V, T
= 0 V,
see fig. 6 and 13
= 14 A, V
D
D
D
D
= 250 μA
= 250 μA
I
GS
= 8.4 A
D
= 14 A,
= 8.4 A
D
= 0 V
J
GS
= 1 mA
= 150 °C
DS
G
G
= 0 V
b
= 80 V,
b
b
MAX.
D
S
b
b
1.7
D
S
62
40
b
MIN.
100
2.0
5.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1442-Rev. B, 05-Jul-10
Document Number: 91020
TYP.
0.12
0.85
670
250
150
4.5
7.5
60
10
34
23
24
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.16
250
280
4.0
5.5
2.5
1.7
S
25
26
11
14
56
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V