SI4425BDY-T1-E3 Vishay, SI4425BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4425BDY-T1-E3
• Description: MOSFET P-CH 30V 8.8A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4425BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.012 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4425BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72000
S09-0767-Rev. E, 04-May-09
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
10
V
= 12 A
0.2
GS
On-Resistance vs. Drain Current
= 15 V
10
= 4.5 V
T
V
20
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
D
30
Gate Charge
- Drain Current (A)
20
0.6
40
30
50
0.8
V
GS
T
60
J
= 10 V
= 25 °C
40
1.0
70
1.2
50
80
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 12 A
= 10 V
6
2
V
V
DS
0
T
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
12
4
I
D
C
C
= 12 A
50
oss
iss
Vishay Siliconix
Si4425BDY
18
6
75
www.vishay.com
100
24
8
125
150
30
10
3