DG642DJ Vishay, DG642DJ Datasheet - Page 3
![Video Switch ICs SPDT Analog Switch](/photos/15/83/158325/pdip8_sml.jpg)
DG642DJ
Manufacturer Part Number
DG642DJ
Description
Video Switch ICs SPDT Analog Switch
Manufacturer
Vishay
Datasheet
1.DG642DJ-E3.pdf
(11 pages)
Specifications of DG642DJ
Number Of Switches
Single
On Resistance (max)
8 Ohms
On Time (max)
100 ns
Off Time (max)
60 ns
Supply Voltage (max)
21 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-8
Maximum Power Dissipation
300 mW
Mounting Style
Through Hole
Supply Current
3.5 mA
Switch Configuration
SPDT
Bandwidth
500MHz
Cross Talk
-85dB
Supply Voltage Range
-3V To 15V
Operating Temperature Range
-40°C To +85°C
Tv / Video Case Style
DIP
No. Of Pins
8
Mounting Type
Through Hole
Configuration
1 X T
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e. V
Document Number: 70058
S11-0154-Rev. F, 31-Jan-11
SPECIFICATIONS (for DG641 and DG643)
Parameter
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
R
Source Off Leakage Current
Drain Off Leakage Current
Channel On Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Input Current
Dynamic Characteristics
On State Input Capacitance
Off State Output Capacitance
Off State Input Capacitance
Bandwidth
Turn On Time
Turn Off Time
Charge Injection
Off Isolation
All Hostie Crosstalk
Power Supplies
Positive Supply Current
Negative Supply Current
DS(on)
IN
= input voltage to perform proper function.
Match
d
d
d
d
V
R
Symbol
R
ANALOG
C
C
C
OIRR
X
I
I
I
V
V
DS(on)
t
S(off)
D(off)
D(on)
BW
t
OFF
DS(on)
S(on)
S(off)
D(off)
TALK
I
ON
I+
Q
INH
INL
I-
IN
Unless Otherwise Specified
V
INH
C
V- = GND V, V+ = 12 V
R
f = 5 MHz, see figure 4
f = 5 MHz, see figure 5
I
R
R
R
V
S
V+ = 15 V, V- = - 3 V
V- = - 5 V, V+ = 12 V
V
V
L
L
L
IN
IN
IN
= - 10 mA, V
V
Test Conditions
S
S
= 1000 pF, V
= 50 see figure 6
= 2.4 V, V
= 1 kC
V
IN
V
= 75 R
= 10 , R
= 0 V or V
= 0 V, V
= 10 V, V
see figure 2
see figure 3
S
S
= GND or V+
V
V
= V
= V
S
D
= 0 V
= 0 V
D
D
D
= 0 V
= 0 V
L
INL
D
L
L
IN
= 10 V
= 35 pF
D
= 75
= 75
D
= 0 V
= 0.8 V
= 5 V
= 0 V
= 0 V
e
Temp.
DG641, DG642, DG643
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
a
Min.
- 100
- 100
- 100
- 10
- 10
- 10
- 20
2.4
- 5
- 1
- 6
- 9
0
b
- 40 °C to 85 °C
Vishay Siliconix
Limits
Typ.
- 0.02
- 0.02
- 0.1
0.05
- 19
- 60
- 87
500
3.5
10
- 3
50
28
8
1
4
4
c
www.vishay.com
Max.
100
100
100
140
0.8
15
20
10
10
10
20
20
12
12
70
50
85
8
8
2
1
6
9
b
MHz
Unit
mA
pC
nA
µA
pF
dB
ns
V
V
3