IRFL9110PBF Vishay, IRFL9110PBF Datasheet
IRFL9110PBF
Specifications of IRFL9110PBF
Available stocks
Related parts for IRFL9110PBF
IRFL9110PBF Summary of contents
Page 1
... SOT or SOIC packages but has the added advantage of improved thermal performance P-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 SiHFL9110-GE3 IRFL9110PbF SiHFL9110-E3 IRFL9110 SiHFL9110 = 25 °C, unless otherwise noted °C ...
Page 2
... IRFL9110, SiHFL9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
Page 3
... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91196 S10-1257-Rev. D, 31-May-10 IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...
Page 4
... IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91196 S10-1257-Rev. D, 31-May-10 ...
Page 5
... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91196 S10-1257-Rev. D, 31-May-10 IRFL9110, SiHFL9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off Fig. 10b - Switching Time Waveforms www ...
Page 6
... IRFL9110, SiHFL9110 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91196. Document Number: 91196 S10-1257-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...