IRF530STRRPBF Vishay, IRF530STRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF530STRRPBF
• Description: MOSFET N-CH 100V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF530STRRPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91020
S10-1442-Rev. B, 05-Jul-10
91020_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
14
12
10
91020_11
8
6
4
2
0
25
10
0.1
10
-2
1
50
10
-5
T
0.05
0.02
0.01
0 - 0.5
0.2
0.1
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
10
t
-3
175
1
, Rectangular Pulse Duration (s)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
IRF530S, SiHF530S
DS
t
r
1
j
= P
D.U.T.
P
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
2
+ T
t
f
+
-
www.vishay.com
C
10
V
DD
5