IRF720SPBF Vishay, IRF720SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF720SPBF
• Description: MOSFET N-CH 400V 3.3A D2PAK
• Manufacturer: Vishay

Specifications of IRF720SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.3A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF720SPBF

IRF720S, SiHF720S
Vishay Siliconix
www.vishay.com
4
91044_05
91044_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
I
0
D
= 3.3 A
V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 80 V
V
10
DS
V
C
C
C
C
C
C
GS
iss
rss
oss
oss
rss
iss
= 200 V
= 0 V, f = 1 MHz
= C
= C
= C
V
10
gs
gd
DS
ds
15
1
+ C
+ C
= 320 V
gd
gd
For test circuit
see figure 13
, C
ds
20
Shorted
25
91044_07
91044_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-2
-1
2
1
0
5
2
5
2
5
2
5
2
1
Fig. 8 - Maximum Safe Operating Area
0.4
0.1
150
2
°
V
V
C
SD
DS
0.6
5
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
1
2
T
T
Single Pulse
0.8
C
J
by R
= 150 °C
5
= 25 °C
25
10
DS(on)
°
C
1.0
2
S-82998-Rev. A, 12-Jan-09
Document Number: 91044
5
10
1.2
2
V
2
GS
= 0 V
1
10
100
10
5
ms
10
1.4
µs
ms
µs
3