FQPF22N30 Fairchild Semiconductor, FQPF22N30 Datasheet
FQPF22N30
Manufacturer Part Number
FQPF22N30
Description
MOSFET N-CH 300V 12A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF22N30.pdf
(8 pages)
Specifications of FQPF22N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
56W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Forward Transconductance Gfs (max / Min)
12.5 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF22N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQPF22N30
Manufacturer:
FSC
Quantity:
86 755
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QFET
QFET
QFET
QFET
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FQPF22N30 Summary of contents
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MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ø3.18 0.20 0.10 (7.00) (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 ...
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