IRF830ALPBF Vishay, IRF830ALPBF Datasheet - Page 3

• Manufacturer Part Number: IRF830ALPBF
• Description: MOSFET N-CH 500V 5A TO262-3
• Manufacturer: Vishay

Specifications of IRF830ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ALPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
91062_01
91062_02
10
10
10
0.1
0.1
10
10
-2
1
1
2
2
0.1
1
Top
Bottom
Top
Bottom
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
1
10
20 µs Pulse Width
T
20 µs Pulse Width
T
10
J
J
=
=
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
25 °C
150 °C
4.5 V
4.5 V
10
10
2
2
91062_03
91062_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
2
- 60 - 40 - 20 0
4.0
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 5.0 A
= 10 V
V
T
T
GS ,
J
J ,
= 150
5.0
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
20 40 60 80 100 120 140 160
C
T
6.0
J
= 25
Vishay Siliconix
°
20 µs Pulse Width
V
C
DS
=
7.0
50 V
www.vishay.com
8.0
3