FDP65N06 Fairchild Semiconductor, FDP65N06 Datasheet

MOSFET N-CH 60V 65A TO-220

FDP65N06

Manufacturer Part Number
FDP65N06
Description
MOSFET N-CH 60V 65A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP65N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 32.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 25V
Power - Max
135W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
65 A
Power Dissipation
135 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP65N06
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP65N06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
FDP65N06 Rev. A1
FDP65N06
60V N-Channel MOSFET
Features
• 65A, 60V, R
• Low gate charge ( typical 132nC)
• Low Crss ( typical 35pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.016Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
TO-220
FDP Series
Parameter
Parameter
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FDP65N06
-55 to +150
S
FDP65N06
D
± 20
13.5
1.08
260
430
135
300
4.5
60
65
41
65
0.92
62.5
UniFET
June 2006
www.fairchildsemi.com
Units
W/°C
Units
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FDP65N06

FDP65N06 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 50V ≤ 65A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FDP65N06 Rev. A1 Package Reel Size TO-220 -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... V = 10V GS 0.08 0.06 0.04 0. Drain Current [A] D Figure 5. Capacitance Characteristics 4000 C 3000 oss C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDP65N06 Rev. A1 Figure 2. Transfer Characteristics otes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 20V Note : 0.2 Figure 6. Gate Charge Characteristics ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on) * Notes : Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FDP65N06 Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0.5 GS µ 250 A D 0.0 -100 50 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDP65N06 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP65N06 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP65N06 Rev. A1 TO-220 7 Dimensions in Millimeters Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDP65N06 Rev. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...

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