SI7462DP-T1-E3 Vishay, SI7462DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7462DP-T1-E3
• Description: MOSFET N-CH 200V 2.6A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7462DP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.1A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 142mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7462DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72136
S09-0227-Rev. C, 09-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
20
10
10
1
8
6
4
2
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 4.1 A
0.2
On-Resistance vs. Drain Current
2
= 100 V
V
4
SD
T
Q
J
g
- Source-to-Drain Voltage (V)
= 150 °C
0.4
I
D
- Total Gate Charge (nC)
4
Gate Charge
- Drain Current (A)
8
0.6
6
V
GS
12
= 6.0 V
0.8
8
T
V
J
GS
= 25 °C
16
1.0
= 10 V
10
1.2
12
20
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
2.5
2.0
1.5
1.0
0.5
0.0
800
600
400
200
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
10
= 4.1 A
= 10 V
C
2
rss
T
0
V
V
J
20
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
30
Capacitance
4
50
C
40
Vishay Siliconix
C
oss
iss
I
D
6
75
50
= 4.1 A
Si7462DP
100
www.vishay.com
60
8
125
70
150
10
80
3