SUD50P06-15-GE3 Vishay, SUD50P06-15-GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P06-15-GE3
• Description: MOSFET P-CH 60V 50A TO-252
• Manufacturer: Vishay

Specifications of SUD50P06-15-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 113W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD50P06-15-GE3TR

SUD50P06-15
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0.1
- 50
0
2
1
10
0
http://www.vishay.com/ppg?68940.
-4
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
V
I
D
- 25
GS
Drain Current vs. Case Temperature
= 17 A
Single Pulse
25
= 10 V
0.02
T
0
T
J
C
- Junction Temperature (°C)
50
- Case Temperature (°C)
25
0.05
50
75
75
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
-3
100
125
125
150
150
Square Wave Pulse Duration (s)
10
100
100
-2
10
10
1
1
0.1
0.0
Limited by
* V
GS
Source-Drain Diode Forward Voltage
T
Single Pulse
> minimum V
C
0.3
V
T
R
= 25 °C
DS
J
V
DS(on) *
= 150 °C
SD
- Drain-to-Source Voltage (V)
Safe Operating Area
- Source-to-Drain Voltage (V)
1
0.6
GS
at which R
10
-1
0.9
S-82285-Rev. A, 22-Sep-08
DS(on)
10
T
Document Number: 68940
J
P(t) = 0.1
= 25 °C
P(t) = 1
is specified
1.2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
BVDSS Limited
100
1.5
1