IRFD110 Vishay, IRFD110 Datasheet - Page 3

• Manufacturer Part Number: IRFD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.54Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 1.3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD110; IRFD111; IRFD112

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
91127_01
91127_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
0
0
1
1
10
10
Top
Bottom
-1
-1
Top
Bottom
V
V
DS
DS
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
A
A
=
=
10
10
25 °C
175 °C
A
1
1
A
= 175 °C
= 25 °C
4.5 V
4.5 V
91127_03
91127_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 5.6 A
= 10 V
V
5
GS ,
T
IRFD110, SiHFD110
J ,
Gate-to-Source Voltage (V)
Junction Temperature (°C)
6
25
°
C
7
175
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
=
50 V
www.vishay.com
9
180
10
3