IRFD9014 Vishay, IRFD9014 Datasheet - Page 3

• Manufacturer Part Number: IRFD9014
• Description: MOSFET P-CH 60V 1.1A 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9014

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 660mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.1A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9014

IRFD9014, SiHFD9014
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
T
= 25 °C
A
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
A
T
= 175 °C
A
Fig. 2 - Typical Output Characteristics, T
= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
A
Document Number: 91136
www.vishay.com
S10-2463-Rev. C, 08-Nov-10
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