SI7456DP-T1-GE3 Vishay, SI7456DP-T1-GE3 Datasheet

MOSFET N-CH 100V 5.7A PPAK 8SOIC

SI7456DP-T1-GE3

Manufacturer Part Number
SI7456DP-T1-GE3
Description
MOSFET N-CH 100V 5.7A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7456DP-T1-GE3

Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Continuous Drain Current Id
5.7A
Threshold Voltage Vgs Typ
4V
Power Dissipation Pd
1.9W
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7456DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7456DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
14 460
Part Number:
SI7456DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7456DP-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
Ordering Information: Si7456DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
100
(V)
8
6.15 mm
D
7
D
0.028 at V
0.025 at V
Si7456DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
D
R
PowerPAK SO-8
DS(on)
Bottom View
5
D
GS
GS
J
a
= 150°C)
(Ω)
a
= 6.0 V
= 10 V
1
S
N-Channel 100-V (D-S) MOSFET
2
S
a
3
S
5.15 mm
4
a
G
b,c
I
A
D
9.3
8.8
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized for Fast Switching
• 100 % R
• Primary Side Switch for High Density DC/DC
• Telecom/Server 48 V, Full-/Half-Bridge DC/DC
• Industrial and 42 V Automotive
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
AS
I
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFETs
Typical
10 s
9.3
6.7
4.3
5.2
2.7
1.5
19
52
- 55 to 150
± 20
100
260
40
30
45
Steady State
Maximum
5.7
4.1
1.6
1.9
1.0
1.8
24
65
Vishay Siliconix
G
N-Channel MOSFET
Si7456DP
www.vishay.com
®
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI7456DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7456DP-T1-E3 (Lead (Pb)-free) Si7456DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) ...

Page 2

... Si7456DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71603 S09-0271-Rev. F, 16-Feb-09 3500 3000 2500 = 6.0 GS 2000 1500 1000 °C J 0.8 1.0 1.2 Si7456DP Vishay Siliconix C iss C rss 500 C oss Drain-to-Source Voltage (V) DS Capacitance 2 9.3 A 2.3 D 2.0 1.7 1.4 1.1 ...

Page 4

... Si7456DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.01 0.0001 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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