IRFU310 Vishay, IRFU310 Datasheet

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IRFU310

Manufacturer Part Number
IRFU310
Description
MOSFET N-CH 400V 1.7A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU310

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.6 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU310

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91272
S-82991-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(TO-252)
D
DD
(Max.) (nC)
DPAK
(nC)
(nC)
(V)
≤ 1.7 A, dI/dt ≤ 40 A/µs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
DPAK (TO-252)
IRFR310PbF
SiHFR310-E3
IRFR310
SiHFR310
= 25 °C, L = 52 mH, R
G
c
a
a
D S
DD
b
V
≤ V
GS
e
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
400
1.9
6.5
12
G
DPAK (TO-252)
IRFR310TRLPbF
SiHFR310TL-E3
IRFR310TRL
SiHFR310TL
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
IRFR310, IRFU310, SiHFR310, SiHFU310
GS
3.6
AS
at 10 V
= 1.7 A (see fig. 12).
a
a
T
T
C
A
for 10 s
a
a
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRFR310TRPbF
SiHFR310T-E3
IRFR310TR
SiHFR310T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310, SiHFR310)
• Straight Lead (IRFU310, SiHFU310)
• Available in Tape and Reel
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
DPAK (TO-252)
IRFR310TRRPbF
SiHFR310TR-E3
-
-
design,
- 55 to + 150
LIMIT
0.020
260
± 20
0.20
400
1.7
1.1
6.0
1.7
2.5
2.5
4.0
86
25
low
a
a
Vishay Siliconix
d
on-resistance
IPAK (TO-251)
IRFU310PbF
SiHFU310-E3
IRFU310
SiHFU310
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFU310 Summary of contents

Page 1

... Power MOSFET FEATURES • Dynamic dV/dt Rating 400 • Repetitive Avalanche Rated 3.6 • Surface Mount (IRFR310, SiHFR310) 12 • Straight Lead (IRFU310, SiHFU310) 1.9 • Available in Tape and Reel 6.5 Single • Fast Switching • Fully Avalanche Rated D • Lead (Pb)-free Available ...

Page 2

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, steady-state) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91272 S-82991-Rev. B, 12-Jan-09 IRFR310, IRFU310, SiHFR310, SiHFU310 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91272 S-82991-Rev. B, 12-Jan-09 ...

Page 5

... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91272 S-82991-Rev. B, 12-Jan-09 IRFR310, IRFU310, SiHFR310, SiHFU310 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91272 S-82991-Rev ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91272. Document Number: 91272 S-82991-Rev. B, 12-Jan-09 IRFR310, IRFU310, SiHFR310, SiHFU310 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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