SI7450DP-T1-E3 Vishay, SI7450DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7450DP-T1-E3
• Description: MOSFET N-CH 200V 3.2A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7450DP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 5.2W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7450DP-T1-E3TR

Si7450DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71432.
www.vishay.com
4
-0.5
-1.0
-1.5
1.0
0.5
0.0
0.01
0.01
0.1
0.1
-50
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
-25
Single Pulse
Single Pulse
0
T
Threshold Voltage
J
- Temperature (°C)
10
25
0.02
- 3
50
10
0.05
I
- 3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
- 2
125
10
Square Wave Pulse Duration (s)
150
Square Wave Pulse Duration (s)
- 2
10
- 1
100
10
80
60
40
20
1
0
0.001
- 1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
Time (s)
S09-0227-Rev. E, 09-Feb-09
= P
0.1
t
2
Document Number: 71432
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
1
1 0
600
10