IRFU9014 Vishay, IRFU9014 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
IRFU9014
Manufacturer Part Number
IRFU9014
Description
MOSFET P-CH 60V 5.1A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFR9014TRL.pdf
(8 pages)
Specifications of IRFU9014
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9014
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU9014PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S-82991-Rev. B, 12-Jan-09
Document Number: 91277
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD