IRF820 Vishay, IRF820 Datasheet
IRF820
Specifications of IRF820
IRF820IR
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IRF820 Summary of contents
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... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 2.5 A (see fig. 12 150 °C. This datasheet is subject to change without notice. IRF820, SiHF820 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 500 ± 2 1 8.0 DM 0.40 W/° ...
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... IRF820, SiHF820 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Transfer Characteristics C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 = 150 °C 0 91059_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF820, SiHF820 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage (V) ...
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... IRF820, SiHF820 Vishay Siliconix 800 MHz iss rss 600 oss ds C iss 400 C oss 200 C rss Drain-to-Source Voltage ( 91059_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 400 250 100 Total Gate Charge (nC) 91059_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0 Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. IRF820, SiHF820 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off ...
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... IRF820, SiHF820 Vishay Siliconix 91059_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 500 Top 400 Bottom 300 200 100 100 125 50 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 12 V This datasheet is subject to change without notice ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRF820, SiHF820 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...