IRFR120 Vishay, IRFR120 Datasheet

IRFR120

Manufacturer Part Number

IRFR120

Description

MOSFET N-CH 100V 7.7A DPAK

Manufacturer

Vishay

Datasheets

1.IRFR120.pdf (8 pages)

2.IRFR120.pdf (6 pages)

3.IRFR120.pdf (10 pages)

Specifications of IRFR120

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

270 mOhm @ 4.6A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

7.7A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

16nC @ 10V

Input Capacitance (ciss) @ Vds

360pF @ 25V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.27 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7.7 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

17 ns

Minimum Operating Temperature

- 55 C

Rise Time

27 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFR120
IRFR120IR

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Current page: 1 of 8
Download datasheet (2Mb)

Note

a. See device orientation.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91266

S-Pending-Rev. A, 21-Jul-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

DS(on)

(TO-252)

(Max.) (nC)

(nC)

(V)

DPAK

(Ω)

(TO-251)

IPAK

DPAK (TO-252)

IRFR120PbF

SiHFR120-E3

IRFR120

SiHFR120

= 10 V

N-Channel MOSFET

Single

100

4.4

7.7

DPAK (TO-252)

IRFR120TRPbF

SiHFR120T-E3

IRFR120TR

SiHFR120T

WORK-IN-PROGRESS

Power MOSFET

= 25 °C, unless otherwise noted

IRFR120, IRFU120, SiHFR120, SiHFU120

0.27

at 10 V

= 25 °C

DPAK (TO-252)

IRFR120TRRPbF

SiHFR120TR-E3

IRFR120TRR

SiHFR120TR

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR120/SiHFR120)

• Straight Lead (IRFU120/SiHFU120)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

SYMBOL

dV/dt

device

DPAK (TO-252)

IRFR120TRLPbF

SiHFR120TL-E3

IRFR120TRL

SiHFR120TL

design,

LIMIT

0.020

± 20

0.33

100

210

7.7

4.9

7.7

4.2

2.5

5.5

low

Vishay Siliconix

on-resistance

IPAK (TO-251)

IRFU120PbF

SiHFU120-E3

IRFU120

SiHFU120

www.vishay.com

RoHS*

COMPLIANT

UNIT

W/°C

V/ns

Available

and

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