IRFD9010PBF Vishay, IRFD9010PBF Datasheet

IRFD9010PBF

Manufacturer Part Number

IRFD9010PBF

Description

MOSFET P-CH 50V 1.1A 4-DIP

Manufacturer

Vishay

Series

HEXFET®r

Datasheets

1.IRFD9010.pdf (6 pages)

2.IRFD9010PBF.pdf (7 pages)

3.IRFD9010PBF.pdf (6 pages)

Specifications of IRFD9010PBF

Transistor Polarity

P-Channel

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

500 mOhm @ 580mA, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

1.1A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

240pF @ 25V

Power - Max

Mounting Type

Through Hole

Package / Case

4-DIP (0.300", 7.62mm)

Minimum Operating Temperature

- 55 C

Resistance Drain-source Rds (on)

0.35 Ohms

Forward Transconductance Gfs (max / Min)

2.5 S

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

1.1 A

Power Dissipation

1 W

Maximum Operating Temperature

+ 125 C

Mounting Style

Through Hole

Continuous Drain Current Id

-1.1A

Drain Source Voltage Vds

-50V

On Resistance Rds(on)

350mohm

Rds(on) Test Voltage Vgs

-10V

Threshold Voltage Vgs Typ

-4V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

*IRFD9010PBF

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