RFP50N06 Fairchild Semiconductor, RFP50N06 Datasheet - Page 6

• Manufacturer Part Number: RFP50N06
• Description: MOSFET N-CH 60V 50A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 20V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 131W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 131000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
I
g(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
V
GS
V
DS
DUT
R
(Continued)
L
+
-
V
DD
I
V
g(REF)
0
0
DD
V
GS
V
= 2V
GS
FIGURE 19. GATE CHARGE WAVEFORMS
Q
g(TH)
Q
V
g(10)
DS
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
Q
g(TOT)
V
GS
= 10V
V
GS
= 20V