IRFD9120 Vishay, IRFD9120 Datasheet - Page 4

• Manufacturer Part Number: IRFD9120
• Description: MOSFET P-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9120

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.6Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Power Dissipation: 1.3W
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9120

IRFD9120, SiHFD9120
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
T
T
SINGLE PULSE
A
J
= 175 °C
= 25 °C
S10-2464-Rev. D, 25-Oct-10
Document Number: 91139