IRFD9120PBF Vishay, IRFD9120PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD9120PBF
• Description: MOSFET P-CH 100V 1A 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9120PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9120PBF

IRFD9120, SiHFD9120
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
J
GS
GS
= 25 °C, I
V
R
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
J
= - 10 V
g
Reference to 25 °C, I
= - 10 V
= 25 °C, I
= 18 , R
= - 80 V, V
V
V
V
V
DS
V
f = 1.0 MHz, see fig. 5
DD
TYP.
TEST CONDITIONS
DS
DS
GS
-
= - 50 V, I
F
= - 50 V, I
= - 100 V, V
= V
= 0 V, I
= - 6.8 A, dI/dt = 100 A/μs
V
V
S
V
DS
D
GS
I
GS
D
GS
= - 1.0 A, V
= 7.1 , see fig. 10
GS
= - 25 V
= - 6.8 A, V
, I
= ± 20 V
see fig. 6 and 13
= 0 V
D
D
= 0 V, T
D
D
= - 250 μA
= - 250 μA
I
= - 0.60 A
D
= - 6.8 A
GS
= - 0.6 A
D
= 0 V
= - 1 mA
GS
J
G
G
DS
= 150 °C
= 0 V
= - 80 V
b
b
MAX.
D
S
b
b
b
120
D
S
b
- 100
MIN.
- 2.0
0.71
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2464-Rev. D, 25-Oct-10
Document Number: 91139
- 0.10
TYP.
0.33
390
170
9.6
4.0
6.0
45
29
21
25
98
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.60
- 1.0
- 8.0
- 6.3
0.66
200
3.0
9.0
S
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V