IRF640STRLPBF Vishay, IRF640STRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRF640STRLPBF
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF640STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF640/SiHF640 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
R
V
GS
GS
= 25 °C, I
G
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= 9.1 Ω, R
= 10 V
= 10 V
J
= 160 V, V
= 25 °C, I
V
V
V
f = 1.0 MHz, see fig. 5
V
V
TYP.
TEST CONDITIONS
DS
DS
DD
GS
DS
-
-
F
= 200 V, V
= V
= 100 V, I
= 0 V, I
= 50 V, I
V
= 18 A, dI/dt = 100 A/µs
V
V
GS
D
DS
S
GS
GS
I
GS
= 5.4 Ω, see fig. 10
D
= 18 A, V
= ± 20 V
see fig. 6 and 13
, I
= 25 V,
= 18 A, V
= 0 V,
= 0 V, T
D
D
D
= 250 µA
= 250 µA
D
I
GS
D
= 11 A
= 18 A,
D
= 11 A
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
d
d
= 160 V,
b
c
b, c
b
MAX.
b, c
D
S
1.0
40
b, c
MIN.
200
2.0
6.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
TYP.
1300
0.29
430
130
300
3.4
14
51
45
36
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.18
S
250
610
4.0
2.0
7.1
25
70
13
39
18
72
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V